Affiliation:
1. Center of Electron Microscopy and State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Abstract
Magnetic semiconductors have attracted extensive attention due to their novel physical properties as well as the potential applications in future spintronics devices. Over the past decade, tremendous efforts have been made in the diluted magnetic semiconductors (DMS) system, with many controversies disentangled but many puzzles unsolved as well. Here in this paper, we summarize recent experimental results in the growth, microstructure and magnetic properties of Ge-based DMSs (mainlyGe1-xMnx), which have been comprehensively researched owing to their compatibility with Si microelectronics. Growth conditions of high-quality, defect-free, and magneticGe1-xMnxbulks, thin films, ordered arrays, quantum dots, and nanowires are discussed in detail.
Funder
National Natural Science Foundation of China
Subject
General Engineering,General Materials Science
Cited by
3 articles.
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