Multiphoton Dissociation of Phenylsilane Upon Excitation at 212.5 NM

Abstract

The photodissociation processes that follow the photolysis of phenylsilane with a narrow band laser at 212.5 nm were studied by observing photofragment fluorescence spectra in the 200 to 900 nm range. Emission from several excited states of Si atoms was detected together with emissions from the molecular fragments SiH(A2∆) and C2(d3∏g). Si and SiH emissions show a quadratic dependence with laser energy whereas dependence for C2 emission is cubic, indicating the participation of two and three photon processes in the formation of the respective fragments. The emission spectra of the molecular fragments provides information about their internal energy content and allows discussion of the possible channels responsible for the appearance of those fragments.