Synthesis and Study of Electrical Properties of SbTeI

Author:

Dubey Harish K.1,Deshmukh L. P.2,Kshirsagar D. E.1,Sharon Madhuri3ORCID,Sharon Maheshwar3

Affiliation:

1. Physics Department, Birla College, Kalyan 421301, India

2. Department of Physics, Solapur University, Solapur 413255, India

3. N.S.N. Research Center for Nanotechnology & Bionanotechnology, Jambhul Phata, Ambernath (W) 421505, India

Abstract

Needle shaped SbTeI crystals were obtained by solid state reaction. Electrical resistance was measured in the temperature range of 4 K to 550 K. SbTeI shows a metallic behavior from 4 K to 300 K, and at higher temperature (>300 K), it shows semiconducting behavior. Unlike SbSI, this material shows almost zero resistance around 550 K. It shows a piezoelectric behavior with a capacitance of 717 pF and its carrier density and nobilities are found to be 2.12 × 1016 cm−3 and 1.01 cm2/(V·s), respectively. Crystals of SbTeI are characterized by XRD, SEM, and Raman analysis. Electrical activation energy is found to be 0.52 eV. It is suggested that this material may be studied for its application as a superconductor with Tc higher than room temperature.

Publisher

Hindawi Limited

Subject

Physical and Theoretical Chemistry

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