Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μmTechnology-Reference-Cited by-同舟云学术

Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μmTechnology

Published:2014 Issue: Volume:2014 Page:1-7
ISSN:1687-8108
Container-title:Advances in Condensed Matter Physics
language:en
Short-container-title:Advances in Condensed Matter Physics

Author:

Tinajero-Perez Enrique J.¹,Molinar-Solis Jesus Ezequiel¹,Garcia-Lozano Rodolfo Z.¹,Rosales-Quintero Pedro²^ORCID,Rocha-Perez Jose M.²,Diaz-Sanchez Alejandro²^ORCID,Morales-Acevedo Arturo³

Affiliation:

1. Centro Universitario Ecatepec, Universidad Autónoma del Estado de México (UAEMex), Laboratorio de Electrónica, José Revueltas 17, Tierra Blanca, 55020 Ecatepec, MEX, Mexico

2. Instituto Nacional de Astrofísica, Óptica y Electrónica INAOE, Luis Enrique Erro 1, 72840 Tonantzintla, PUE, Mexico

3. Centro de Investigación y Estudios Avanzados del I.P.N, Sección de Electrónica del Estado Sólido, Avenida Instituto Politécnico Nacional No. 2508, Col. San Pedro Zacatenco, 07360 Mexico, DF, Mexico

Abstract

The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.

Publisher

Hindawi Limited

Subject

Condensed Matter Physics

Link

http://downloads.hindawi.com/journals/acmp/2014/632785.pdf

Reference7 articles.

1. UV-activated conductances allow for multiple time scale learning

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