Affiliation:
1. C./Julio Palacios, 11, 9º-B, Madrid 28029, Spain
Abstract
Optical absorption in the far infrared range for amorphous GaAs, SiC and Ge is investigated. Small clusters in the context of dynamical disorder are considered. Average values of the absorption contributions due to both dynamical and structural disorders are introduced. In particular, an equation for the spectrum due to dynamical disorder in amorphous SiC is presented.
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
3 articles.
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