Effects of Deposition Conditions on Texture in Copper Thin Films on Si (111)

Author:

Knorr D. B.1,Lu T.-M.2

Affiliation:

1. Materials Engineering Department, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USA

2. Physics Department, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, USA

Abstract

The texture of copper films deposited on bare Si (111) is studied using a partially ionized beam deposition technique. A change in deposition parameters (percent ions and substrate bias) radically alters the texture from epitaxial to fiber. Under conditions indicative of deposition by evaporation, a sharp texture typified by a Cu {531} ‖ Si (111) relationship is observed. At measurable ion energy levels, the film texture becomes Cu (111). A narrowly defined set of conditions promotes epitaxy which breaks down into a fiber texture for conditions of successively higher ion energy. The role of internal (boundary) energy and interfacial (substrate/film and film/ambient) energy are discussed.

Publisher

Hindawi Limited

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