Effect of Gradient Doping on Charge Collection Efficiency of EBCMOS Devices

Abstract

We investigated the effect of different gradient doping methods on the charge collection efficiency of the electron multiplication layer of EBCMOS devices. Exponential doping of the electron multiplication layer can form a built-in electric field in the electron multiplication layer that is favorable for photoelectron transport, so exponential doping instead of uniform doping in the electron multiplication layer of EBCMOS can effectively improve the charge collection efficiency. It is shown that exponential heavy doping on the side of the electron multiplication layer near the dead layer and exponential light doping on the side near the depletion region can improve the built-in electric field structure and increase the lifetime of the multiplied electrons, thereby improving the charge collection efficiency of EBCMOS. The optimized device achieves a charge collection efficiency of 94.48% at an incident electron energy of 4 keV, an electron beam diameter of 20 nm, a dead layer thickness of 60 nm, and a P-type silicon epitaxial layer thickness of 10 μm.