A SiGe BiCMOS Instrumentation Channel for Extreme Environment Applications

Author:

Ulaganathan Chandradevi1,Nambiar Neena1,Cornett Kimberly2,Greenwell Robert L.1,Yager Jeremy A.3,Prothro Benjamin S.1,Tham Kevin1,Chen Suheng1,Broughton Richard S.2,Fu Guoyuan2,Blalock Benjamin J.1,Britton Charles L.1,Ericson M. Nance1,Mantooth H. Alan2,Mojarradi Mohammad M.4,Berger Richard W.5,Cressler John D.6

Affiliation:

1. Department of Electrical Engineering and Computer Science, The University of Tennessee, Knoxville, TN 37996, USA

2. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA

3. Power and Sensor Electronics, Jet Propulsion Laboratory, Pasadena, CA 91109, USA

4. Instrument Electronics and Sensors, Jet Propulsion Laboratory, Pasadena, CA 91109, USA

5. Space Products and Systems, BAE Systems, Manassas, VA 20110, USA

6. School of Electrical and Computer Engineering, Georgia Institute of Technology, tlanta, GA 30332, USA

Abstract

An instrumentation channel is designed, implemented, and tested in a 0.5-μm SiGe BiCMOS process. The circuit features a reconfigurable Wheatstone bridge network that interfaces an assortment of external sensors to signal processing circuits. Also, analog sampling is implemented in the channel using a flying capacitor configuration. The analog samples are digitized by a low-power multichannel A/D converter. Measurement results show that the instrumentation channel supports input signals up to 200 Hz and operates across a wide temperature range of -180°C to 125°C. This work demonstrates the use of a commercially available first generation SiGe BiCMOS process in designing circuits suitable for extreme environment applications.

Funder

NASA ETDP Program

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. CMOS Rad-Hard Front-End Electronics for Precise Sensors Measurements;IEEE Transactions on Nuclear Science;2016-08

2. Radiation Effects in SiGe Technology;IEEE Transactions on Nuclear Science;2013-06

3. Design Flow;Model-Based Engineering for Complex Electronic Systems;2013

4. A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface;IEEE Aerospace and Electronic Systems Magazine;2012-06

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