Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

Author:

Qi Hua1,Rendell R. W.1,Glembocki O. J.1,Prokes S. M.1

Affiliation:

1. Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA

Abstract

Our measurements of surface enhanced Raman scattering (SERS) on Ga2O3dielectric nanowires (NWs) core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigations demonstrate that the SERS intensity is not only dependent on the direction and wavelength of the incident light, but also on the species of the SERS active molecule. The largest signals were observed on an NW when the incident 514.5 nm light was polarized perpendicular to the length of the NW, while the opposite phenomenon was observed at the wavelength of 785 nm. Our theoretical simulations of the polarization dependence at 514.5 nm and 785 nm are in good agreement with the experimental results.

Funder

Office of Naval Research

Publisher

Hindawi Limited

Subject

General Materials Science

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