Understanding the Preferred Crystal Orientation of Sputtered Silver in Ar/N2 Atmosphere: A Microstructure Investigation

Author:

Hu YuHao1,Zhu Jiajun12ORCID,Zhang Chao3ORCID,Yang Wulin12,Fu Licai12,Li Deyi12,Zhou Lingping12

Affiliation:

1. College of Materials Science and Engineering, Hunan University, Changsha 410082, China

2. Hunan Province Key Laboratory for Spray Deposition Technology and Application, Hunan University, Changsha 410082, China

3. Science and Technology on Power Sources Laboratory, Tianjin Institute of Power Sources, Tianjin 300384, China

Abstract

Silver thin films were prepared by direct current (DC) magnetron sputtering technique in Ar/N2 atmosphere with various N2 volumetric ratios on Si substrates. Silver thin films prepared in pure Ar atmosphere show highly (111) preferred orientation. However, as the N2 content increases, Ag (111) preferred orientation evolves into (100) preferred orientation gradually. When N2 content is more than 12.5 vol.%, silver thin films exhibit highly (100) preferred orientation. Moreover, the average grain size decreases with increasing N2 content. Silver thin films with low relative density are prepared at high N2 content, which results in higher resistivity of films. By analyzing the resistivity and microstructures of silver thin films, the optimum range of N2 content to get compact silver thin films is found to be not more than 33.3 vol.%. Finally, the mechanism of N2 addition on microstructure evolution of silver thin films was proposed.

Funder

Foundation of National Key Laboratory, P R China

Publisher

Hindawi Limited

Subject

General Engineering,General Materials Science

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3