Influence of Secondary Phases in Kesterite-Cu2ZnSnS4Absorber Material Based on the First Principles Calculation-Reference-Cited by-同舟云学术

Influence of Secondary Phases in Kesterite-Cu2ZnSnS4Absorber Material Based on the First Principles Calculation

Published:2015 Issue: Volume:2015 Page:1-6
ISSN:1110-662X
Container-title:International Journal of Photoenergy
language:en
Short-container-title:International Journal of Photoenergy

Author:

Bao Wujisiguleng¹,Ichimura Masaya¹^ORCID

Affiliation:

1. Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan

Abstract

The influence of secondary phases of ZnS and Cu2SnS3(CTS) in Cu2ZnSnS4(CZTS) absorber material has been studied by calculating the band offsets at the CTS/CZTS/ZnS multilayer heterojunction interfaces on the basis of the first principles band structure calculation. The ZnS/CZTS heterointerface is of type I and since ZnS has a larger band gap than that of CZTS, the ZnS phase in CZTS is predicted to be resistive barriers for carriers. The CTS/CZTS heterointerface is of type I; that is, the band gap of CTS is located within the band gap of CZTS. Therefore, the CTS phase will act as a recombination site in CZTS.

Publisher

Hindawi Limited

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics,General Chemistry

Link

http://downloads.hindawi.com/journals/ijp/2015/592079.pdf

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