Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching
Author:
Affiliation:
1. Advanced Module Process Development Division, Technology Development Center, Macronix International Company, Ltd., (MD420) No.16, Li-Hsin Road, Science-Based Industrial Park, Hsinchu 300, Taiwan
Abstract
Publisher
Hindawi Limited
Link
http://downloads.hindawi.com/archive/2008/154035.pdf
Reference4 articles.
1. Development of Aluminum Chemical Mechanical Planarization
2. Integration of metal masking and etching for deep submicron patterning
3. Reactive ion etch of 150 nm Al lines for interconnections in dynamic random access memory
4. Removal of the Metallorganic Polymer Residues Formed at Via Holes
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