Efficiency Improved byH2Forming Gas Treatment for Si-Based Solar Cell Applications

Author:

Cheng Yuang-Tung1,Ho Jyh-Jier1,Lee William2,Tsai Song-Yeu2,Chen Liang-Yi1,Liou Jia-Jhe1,Chang Shun-Hsyung3,Shen Huajun4,Wang Kang L.4

Affiliation:

1. Department of Electrical Engineering, National Taiwan Ocean University, No.2 Pei-Ning Road, Keelung 20224, Taiwan

2. Photovoltaics Technology Center, Industrial Technology Research Institute, No.195 Chung Hsing Road, 4 Sec. Chu Tung, Hsin Chu 31061, Taiwan

3. Department of Microelectronic Engineering, National Kaohsiung Marine University, No.142 Haijhuan Road, Kaohsiung 81143, Taiwan

4. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA

Abstract

The photovoltaic (PV) effects have been investigated and improved using efficient treatments both on single-crystalline (sc) and on multicrystalline (mc) silicon (Si) solar cells. The major effect of forming gas (FG) treatment on solar cell performance is the fill-factor values, which increase 3.75% and 8.28%, respectively, on sc-Si and mc-Si solar cells. As for the optimal 15%-H2ratio and 40-minute FG treatment, the conversion efficiency (η) values drastically increase to 14.89% and 14.31%, respectively, for sc- and mc-Si solar cells. Moreover, we can measure the internal quantum efficiency (IQE) values increase withH2-FG treatment under visible wavelength (400~900 nm) radiation. Thus based on the work in this research, we confirm thatH2passivation has become crucial both in PV as well as in microelectronics fields. Moreover, the developed mc-Si solar cell by properH2FG treatment is quite suitable for commercial applications.

Funder

National Science Council

Publisher

Hindawi Limited

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics,General Chemistry

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