Application of Ellipsometry to Control the Plasmachemical Synthesis of Thin TiONx Layers
Author:
Affiliation:
1. Institute of Semiconductor Physics SB RAS, 13 Lavrentyev Avenue, Novosibirsk 630090, Russia
2. Novosibirsk State University, Novosibirsk 630090, Russia
Abstract
Funder
Ministry of Education and Science of the Russian Federation
Publisher
Hindawi Limited
Subject
Condensed Matter Physics
Link
http://downloads.hindawi.com/journals/acmp/2015/709308.pdf
Reference24 articles.
1. Density functional study on the adsorption and surface reactions on SiO2 in TiN-CVD using TiCl4 and NH3
2. The effect of thermal treatment on the electrical properties of titanium nitride thin films by filtered arc plasma method
3. Electrical transport, optical properties, and structure of TiN films synthesized by low‐energy ion assisted deposition
4. Influence of substrate temperature and bias voltage on the optical transmittance of TiN films
5. Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties
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