MBE Growth and Optical Properties of GaN, InN, and A3 B5 Nanowires on SiC/Si(111) Hybrid Substrate

Author:

Reznik R. R.1234ORCID,Kotlyar K. P.1,Ilkiv I. V.1,Khrebtov A. I.4ORCID,Soshnikov I. P.135,Kukushkin S. A.6,Osipov A. V.6,Nikitina E. V.1,Cirlin G. E.123ORCID

Affiliation:

1. St. Petersburg Academic University-Nanotechnology Research and Education Centre RAS, Khlopina 8/3, St. Petersburg, Russia

2. Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg, Russia

3. Institute for Analytical Instrumentation RAS, Rizhsky 26, St. Petersburg, Russia

4. ITMO University, Kronverkskiy Pr. 49, St. Petersburg, Russia

5. Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg, Russia

6. Institute of Problems of Mechanical Engineering Russian Academy of Science, Bolshoj 6, St. Petersburg, Russia

Abstract

The possibility of GaN, InN, and A3B5 nanowires MBE growth on a silicon substrate with a nanoscale SiC buffer layer has been demonstrated. Optical studies indicated a higher structural quality GaN NWs compared with the best structures of GaN NWs without silicon carbide buffer layer. The diameter of A3B5 NWs is smaller than diameter of similar NWs which were grown on a silicon substrate, because of higher lattice mismatch. In particular, InAs NWs diameter was evaluated as little as 10 nm, one of the smallest ever demonstrated for this NWs system.

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Hindawi Limited

Subject

Condensed Matter Physics

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