Electrical Characterization of Nanopolyaniline/Porous Silicon Heterojunction at High Temperatures

Abstract

Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. TheI-Vmeasurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature.