Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films

Abstract

A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ−1was observed, with a decline time of ∼1.5 ns and a full width at half-maximum (FWHM) of ∼4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ−1 mm−1. This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection