High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability-Reference-Cited by-同舟云学术

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Published:2008 Issue: Volume:2008 Page:1-5
ISSN:1687-8175
Container-title:Research Letters in Optics
language:en
Short-container-title:Research Letters in Optics

Author:

Schmitt-Sody Andreas¹,Velten Andreas¹,Liu Ye¹,Arissian Ladan¹,Diels Jean-Claude¹

Affiliation:

1. Department of Physics and Astronomy and Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA

Abstract

We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth) and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.

Funder

National Science Foundation

Publisher

Hindawi Limited

Link

http://downloads.hindawi.com/journals/ijo/2008/865092.pdf

Reference13 articles.

1. Subpicosecond pulses from a mode-locked semiconductor laser

2. Picosecond pulse generation by passive mode locking of diode lasers

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4. 21-W picosecond passively mode-locked external-cavity semiconductor laser

5. A new structure for high-power TW-SLA (Travelling wave semiconductor laser amplifier)

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