Affiliation:
1. Technology Development Department, CSMC Technologies Corporation, Wuxi 214000, China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract
The rapid development of power semiconductor devices is helping to realize a low-carbon society and provide a better life for everyone. Power semiconductors not only are used in many large-scale industrial control fields such as power transmission and control in power grids, rail transit traction systems, and defense weapons and equipment, but also play a vital role in daily equipment such as home appliances, medical electronics, and electronic communications; all devices such as power steering in cars, battery chargers, cell phones, and microwave ovens utilize power electronics. This research mainly focuses on the high-voltage LDMOS device model and its implementation. Based on the in-depth study of the structure and physical mechanism of high-voltage LDMOS devices, with the help of BSIM4 core model, which is now very mature and widely used in industry, the drift region of high-voltage LDMOS is mainly modeled, and the drift region of LDMOS is modeled as a variable resistance controlled by voltage. Finally, Verilog-A language and neural network method are used to establish a compact model of LDMOS. The improved model is applied to LDMOS and can better fit the output characteristics with self-heating effect.
Subject
General Mathematics,General Medicine,General Neuroscience,General Computer Science