Concentration and Annealing Effects on Luminescence Properties of Ion-Implanted Silica Layers

Abstract

The development of optoelectronic or even photonic devices based on silicon technology is still a great challenge. Silicon and its oxide do not possess direct optical transitions and, therefore, are not luminescent. The remaining weak light emission is based on intrinsic and extrinsic defect luminescence. Thus the investigations are extended to ion implantation into silica layers, mainly on over-stoichiometric injection or isoelectronic substitution of both the constituents silicon or oxygen, that is, by ions of the group IV (C, Si, Ge, Sn, Pb) or the group VI (O, S, Se). The samples have been used were 500 nm thick thermally grown amorphous SiO2 layers, wet oxidized at 1100°C on a crystalline Si substrate. The ion implantations were performed with different energies but all with a uniform dose of 5 × 1016 ions/cm2. Such implantations produce new luminescence bands, partially with electronic-vibronic transitions and related multimodal spectra. Special interest should be directed to lowdimension nanocluster formation in silica layers. Implantations of group IV elements show a general increase of the luminescence in the violet-blue region and implantations of group VI elements lead to an increase in the yellow-red spectral region. Comparing cathodoluminescence, photoluminescence, and electroluminescence still too small luminescence quantum yields are obtained.