Purity and Defect Characterization of Single-Wall Carbon Nanotubes Using Raman Spectroscopy

Abstract

We investigated the purity and defects of single-wall carbon nanotubes (SWCNTs) produced by various synthetic methods including chemical vapor deposition, arc discharge, and laser ablation. The SWCNT samples were characterized using scanning electron microscopy (SEM), thermogravimetric analysis (TGA), and Raman spectroscopy. Quantitative analysis of SEM images suggested that the G-band Raman intensity serves as an index for the purity. By contrast, the intensity ratio of G-band to D-band (G/D ratio) reflects both the purity and the defect density of SWCNTs. The combination of G-band intensity and G/D ratio is useful for a quick, nondestructive evaluation of the purity and defect density of a SWCNT sample.