Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands

Author:

Sirbu A.1,Volet N.1,Mereuta A.1,Lyytikäinen J.2,Rautiainen J.2ORCID,Okhotnikov O.2,Walczak J.3,Wasiak M.3,Czyszanowski T.3,Caliman A.1,Zhu Q.1,Iakovlev V.1,Kapon E.1

Affiliation:

1. Swiss Federal Institute of Technology (EPFL), Laboratory of Physics of Nanostructures, 1015 Lausanne, Switzerland

2. Optoelectronics Research Centre, Tampere University of Technology, 33720 Tampere, Finland

3. Institute of Physics, Technical University of Łódz, 90-924 Łódz, Poland

Abstract

1300-nm, 1550-nm, and 1480-nm wavelength, optically pumped VECSELs based on wafer-fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors with intracavity diamond heat spreaders are described. These devices demonstrate very low thermal impedance of 4 K/W. Maximum CW output of devices with 5 groups of quantum wells shows CW output power of 2.7 W from 180 μm apertures in both the 1300-nm and the 1550-nm bands. Devices with 3 groups of quantum wells emitting at 1480 nm and with the same aperture size show CW output of 4.8 W. These VECSELs emit a high-quality beam with beam parameter below 1.6 allowing reaching a coupling efficiency as high as 70% into a single-mode fiber. Maximum value of output power of 6.6 W was reached for 1300 nm wavelength devices with 290 μm aperture size. Based on these VECSELs, second harmonic emission at 650 nm wavelength with a record output of 3 W and Raman fiber lasers with 0.5 W emission at 1600 nm have been demonstrated.

Publisher

Hindawi Limited

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

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