Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
Author:
Affiliation:
1. Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589, Saudi Arabia
Abstract
Publisher
Hindawi Limited
Subject
General Environmental Science,General Biochemistry, Genetics and Molecular Biology,General Medicine
Link
http://downloads.hindawi.com/journals/tswj/2014/475423.pdf
Reference26 articles.
1. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
2. Optical Properties of Strained AlGaN and GaInN on GaN
3. Room-temperature continuous-wave operation of GaInN/GaN multiquantum well laser diode
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