2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate-Reference-Cited by-同舟云学术

2.3 µm InGaAsSb/AlGaAsSb Quantum-Well Laser Diode via InAs/GaSb Superlattice Layer on GaAs Substrate

Published:2016 Issue: Volume:2016 Page:1-4
ISSN:1687-4110
Container-title:Journal of Nanomaterials
language:en
Short-container-title:Journal of Nanomaterials

Author:

You Minghui¹^ORCID,Sun Qixiang¹,Yin Liping¹,Fan Juanjuan¹,Liang Xuemei¹,Li Xue¹,Yu Xiuling¹,Li Shijun¹,Liu Jingshen¹

Affiliation:

1. Information Technology College, Jilin Agricultural University, Jilin, Changchun 130022, China

Abstract

We present 2.3 μm InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achieving balanced and optimal LDs performance. Accordingly, power of 8.6 mW was obtained with 2.3 μm wavelength. Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode.

Funder

Jilin Province Department of Education Key Foundation

Publisher

Hindawi Limited

Subject

General Materials Science

Link

http://downloads.hindawi.com/journals/jnm/2016/8393502.pdf

Reference15 articles.

1. Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes

2. GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

3. Continuous wave operation of diode lasers at 3.36μm at 12°C