2D Finite Element Method Simulation of Lateral Resonant Tunneling Devices
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Published:1998-01-01
Issue:1-4
Volume:6
Page:131-135
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ISSN:1065-514X
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Container-title:VLSI Design
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language:en
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Short-container-title:VLSI Design
Author:
Shao Zhi-An1,
Porod Wolfgang1,
Lent Craig S.1
Affiliation:
1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
Abstract
Using the finite element method, we investigate device applications of lateral resonant tunneling
structures which consist of a transmission channel with attached resonators. Such
structure exhibits resonance-antiresonance transmission features which may be engineered to
achieve desired device properties.
We show that the valley current can be reduced in such 2D lateral resonant tunneling
devices, resulting in an improved current peak-to-valley ratio.
Funder
Office of Naval Research
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture