Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD-Reference-Cited by-同舟云学术

Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

Published:2012 Issue: Volume:2012 Page:1-5
ISSN:1110-662X
Container-title:International Journal of Photoenergy
language:en
Short-container-title:International Journal of Photoenergy

Author:

Ktifa S.¹,Ghrib M.²,Saadallah F.¹,Ezzaouia H.²,Yacoubi N.¹

Affiliation:

1. Photothermal Laboratory, Nabeul, Tunisia

2. Photovoltaic Laboratory, Research and Technology Centre of Energy, Borj-Cedria Science and Technology Park, BP 95, 2050 Hammam-Lif, Tunisia

Abstract

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

Publisher

Hindawi Limited

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics,General Chemistry

Link

http://downloads.hindawi.com/journals/ijp/2012/418924.pdf

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