Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing-Reference-Cited by-同舟云学术

Luminescence Properties of Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing

Published:2012 Issue: Volume:2012 Page:1-8
ISSN:1687-4110
Container-title:Journal of Nanomaterials
language:en
Short-container-title:Journal of Nanomaterials

Author:

Kim Sung¹,Shin Dong Hee¹,Shin Dong Yeol¹,Kim Chang Oh¹,Park Jae Hee¹,Yang Seung Bum¹,Choi Suk-Ho¹,Yoo Seung Jo²,Kim Jin-Gyu²

Affiliation:

1. Department of Applied Physics, College of Applied Science, Kyung Hee University, Yongin 446-701, Republic of Korea

2. Division of Electron Microscopic Research, Korea Basic Science Institute, 113 Gwahangno, Yusong-gu, Daejeon 305-333, Republic of Korea

Abstract

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition ofSiOxsingle layer orSiOx/SiO2multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of SiOxlayers on the luminescence are analyzed in detail and discussed based on possible mechanisms.

Funder

National Research Foundation of Korea

Publisher

Hindawi Limited

Subject

General Materials Science

Link

http://downloads.hindawi.com/journals/jnm/2012/572746.pdf

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