Multiplicative Valency-Based Descriptors for Silicon Carbides Si2C3 − I[p, q], Si2C3 − II[p, q], Si2C3 − III[p, q], and SiC3 − III[p, q] in Drug Applications

Author:

Xu Jin1ORCID,Javaid Nasir2,Bilal Shamas2,Rafaqat Muhammad3ORCID,Tlili Iskander45ORCID

Affiliation:

1. Department of Applied Mathematics, Huainan Normal University, Huainan 232038, China

2. Department of Mathematics, University of Sialkot, Lahore, Pakistan

3. Department of Mathematics and Statistics, The University of Lahore, Lahore 54000, Pakistan

4. Department for Management of Science and Technology Development, Ton Duc Thang University, Ho Chi Minh City, Vietnam

5. Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam

Abstract

Topological indices help us to collect information about algebraic graphs and give us a mathematical approach to understand the properties of algebraic structures. In literature, there are more than 148 topological indices, but none of them can completely describe all properties of chemical compounds. Together, they do it to some extent, so there is always room to define new topological indices. In this paper, we introduced the multiplicative version of Shingali and Kanabour indices and computed these indices for Silicon Carbides Si2C3Ip,q, Si2C3IIp,q, Si2C3IIIp,q, and SiC3IIIp,q.

Funder

University Natural Science Research Project of Anhui Province

Publisher

Hindawi Limited

Subject

General Chemistry

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