Electrostatic Potential Distribution Analysis of Silicon Nanowire Field Effect Transistor with Various Channel Length-Reference-Cited by-同舟云学术

Electrostatic Potential Distribution Analysis of Silicon Nanowire Field Effect Transistor with Various Channel Length

Published:2022-04-08 Issue: Volume:2022 Page:1-6
ISSN:1687-4129
Container-title:Journal of Nanomaterials
language:en
Short-container-title:Journal of Nanomaterials

Author:

Krishnamoorthy Umapathi¹^ORCID,Samikannu Ravi²^ORCID,Nataraj Mahesh³^ORCID,Sushma I. Sri Phani⁴^ORCID,Gupta Saurabh⁵^ORCID,Shanmugam Sathish Kumar⁶^ORCID,Dasari Narasimha Rao⁷^ORCID

Affiliation:

1. Department of Electrical and Electronics Engineering, M. Kumarasamy College of Engineering, Karur, India

2. Department of Electrical Computer and Telecommunications Engineering, Faculty of Engineering and Technology, Botswana International University of Science and Technology, Private Bag -16, Palapye, Botswana

3. Department of Electronics and Instrumentation Engineering, Kongu Engineering College, Perundurai, Erode, India

4. Department of Mechanical Engineering, Jawaharlal Nehru Technological University Kakinada, University College of Engineering, Narasaraopet, India

5. Department of Electrical and Electronics Engineering, Technocrats Institute of Technology and Science, Bhopal, India

6. Department of Electrical and Electronics Engineering, M. Kumarasamy College of Engineering, Karur, Tamilnadu, India

7. Department of Electrical Power Engineering, Defence University, College Of Engineering, Ethiopia

Abstract

Silicon nanowire FET plays a vital role in building of nanoscale electronic device applications. In this article, the silicon nanowire field effect model is designed with different channel lengths. By using the SiNW FET device model, various electrostatic potential distribution studies are done. This SiNW FET model is reducing the complexity in design. Two types of the device geometries are studied by changing the silicon nanowire channel length as 1000 nm and 200 nm. The 1000 nm channel provides high penetration to the active region of the nanowire FET than the 200 nm channel. This silicon nanowire FET model can apply to many nanoscale biochemical elements sensing applications.

Publisher

Hindawi Limited

Subject

General Materials Science

Link

http://downloads.hindawi.com/journals/jnm/2022/8023177.pdf

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