Modeling of Photoconductivity of Porous Silicon

Author:

Monastyrskii L. S.1,Sokolovskii B. S.1,Pavlyk M. R.1,Parandii P. P.1

Affiliation:

1. Ivan Franko National University of L'viv, 50 Dragomanov Street, 79005 Lviv, Ukraine

Abstract

The paper investigates a model of the photoconductivity of macroporous silicon in the conditions of homogeneous generation of photocarriers. By the finite element method, the stationary photoconductivity and the time evolution of photoconductivity after instantaneous shutdown of light are calculated. Dependences of the stationary photoconductivity and relaxation time of photoconductivity on the velocity of recombination of nonequilibrium carriers at the surfaces of pores, radius of pores, and average distance between them are analyzed.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Kinetics of charge carriers in bilateral macroporous silicon;Semiconductor Physics, Quantum Electronics and Optoelectronics;2023-06-26

2. Фотопровідність у двосторонньому макропористому кремнії;Ukrainian Journal of Physics;2023-02-14

3. Effect of pore depth on the effective minority carrier lifetime in macroporous silicon;Himia, Fizika ta Tehnologia Poverhni;2019-09-30

4. RELAXATION OF PHOTOCONDUCTIVITY IN MACROPOROUS SILICON;Optoèlektronika i poluprovodnikovaâ tehnika;2018-12-15

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