A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Author:

Sharifi Mohammad Javad1,Bahrepour Davoud2ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Shahid Beheshti University, 14966-47535 Tehran, Iran

2. Science and Research Branch, Islamic Azad University, 14966-47535 Tehran, Iran

Abstract

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A complete set of logic gates with an identical single-stage structure based on periodic nature of single-electron devices;Journal of Computational Electronics;2020-09-27

2. A Multiloop and Full Amplitude Hysteresis Model for Molecular Electronics;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2016-02

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