A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor-Reference-Cited by-同舟云学术

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Published:2009-08-19 Issue: Volume:2009 Page:1-9
ISSN:1065-514X
Container-title:VLSI Design
language:en
Short-container-title:VLSI Design

Author:

Sharifi Mohammad Javad¹,Bahrepour Davoud²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Shahid Beheshti University, 14966-47535 Tehran, Iran

2. Science and Research Branch, Islamic Azad University, 14966-47535 Tehran, Iran

Abstract

A new structure for an exclusive-OR (XOR) gate based on the resonant-tunneling high electron mobility transistor (RTHEMT) is introduced which comprises only an RTHEMT and two FETs. Calculations are done by utilizing a new subcircuit model for simulating the RTHEMT in the SPICE simulator. Details of the design, input, and output values and margins, delay of each transition, maximum operating frequency, static and dynamic power dissipations of the new structure are discussed and calculated and the performance is compared with other XOR gates which confirm that the presented structure has a high performance. Furthermore, to the best of authors' knowledge, it has the least component count in comparison to the existing structures.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture

Link

http://downloads.hindawi.com/archive/2009/803974.pdf

Reference19 articles.

1. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic

2. A new method for quantum device simulation

3. Novel resonant tunneling transistor with high transconductance at room temperature

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