Cobalt Xanthate Thin Film with Chemical Bath Deposition

Abstract

Cobalt xanthate thin films (CXTFs) were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate). The structure of the films was analyzed by far-infrared spectrum (FIR), mid-infrared (MIR) spectrum, nuclear magnetic resonance (NMR), and scanning electron microscopy (SEM). These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM). The transmittance was about 70–80% (4 hours, 50°C). The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.