CORRELATION BETWEEN ELECTRICAL AND OPTICAL PROPERTIES OF DOPED SILICON NANOCRYSTALS

Abstract

We propose through this work a correlation method leading to a determination of a semi-empirical relationship between optical and electrical properties in terms of refractive index and dark conductivity of doped silicon nanocrystals based on experimental data published in literature. First, an analytical model relating the conductivity and bandgap of doped silicon nanocrystals was derived. Using an empirical expression relating the refractive index to the bandgap energy, we correlated the electrical and optical parameters of N-type nanocrystalline silicon with a semi-empirical expression. The semi-empirical relationship was found to account correctly for the experimental results and yield a reasonably good agreement in an interval of the bandgap energy variation of N-type silicon nanocrystal films. The values of the fitting parameters were calculated for the N-type silicon nanocrystal films having their bandgap energy between 1. 7 eV and 2.2 eV.