COMPARATIVE STUDY OF THE RECOMBINANT ACTIVITY EFFECT AT THE GRAIN BOUNDARIES IN SILICON SOLAR CELLS

Abstract

This work studies the effect of carrier trapping and the recombination activity at the grain boundaries in the p-layer of polysilicon solar cells with respect to the deposition temperature. The dependence of the grain size on the deposition temperature was studied in different samples of boron-doped low-pressure chemical vapor deposition (LPCVD) silicon deposits, conducted in a horizontal low-pressure atmospheric pressure reactor where the temperature varied over a range from 520 °C to about 605 °C. The obtained results show clear evidence of dependence on effective changes in the trapping effect as a function of the trapping density states, the doping level and the thickness dimension of the deposited layer.