Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite-Reference-Cited by-同舟云学术

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Vanadium-doped semi-insulating SiC single crystal growth by using porous graphite

Published:2016-12-31 Issue:6 Volume:26 Page:215-219
ISSN:1225-1429
Container-title:Journal of the Korean Crystal Growth and Crystal Technology
language:en
Short-container-title:Journal of the Korean Crystal Growth and Crystal Technology

Author:

Lee Dong-Hun,Kim Hwang-Ju,Kim Young-Gon,Choi Su-Hun,Park Mi-Seon,Jang Yeon-Suk,Lee Won-Jae,Jung Kwang-Hee,Kim Tae-Hee,Choi Yi-Sik

Publisher

The Korea Association of Crystal Growth

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kacg/JAKO201608967046424.pdf

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling the electrical resistivity of porous silicon carbide ceramics and their applications: A review;International Journal of Applied Ceramic Technology;2022-02-24

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