Characterizations of graded AlGaN epilayer grown by HVPE-Reference-Cited by-同舟云学术

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Characterizations of graded AlGaN epilayer grown by HVPE

Published:2015-04-30 Issue:2 Volume:25 Page:45-50
ISSN:1225-1429
Container-title:Journal of the Korean Crystal Growth and Crystal Technology
language:en
Short-container-title:Journal of the Korean Crystal Growth and Crystal Technology

Author:

Lee Chanbin,Jeon Hunsoo,Lee Chanmi,Jeon Injun,Yang Min,Yi Sam Nyung,Ahn Hyung Soo,Kim Suck-Whan,Yu Young Moon,Sawaki Nobuhiko

Publisher

The Korea Association of Crystal Growth

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kacg/JAKO201514039404835.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hexagonal shape Si crystal grown by mixed-source HVPE method;J KOR CRYST GROWTH C;2021

2. Alkyl-Functionalized Boron Nitride Nanosheets as Lubricant Additives;ACS Applied Nano Materials;2020-08-10

3. Properties of AlN epilayer grown on 6H-SiC substrate by mixed-source HVPE method;J KOR CRYST GROWTH C;2020

4. p-Type AlN epilayer growth for power semiconductor device by mixed-source HYPE method;J KOR CRYST GROWTH C;2019

5. HVPE growth of Mg-doped AlN epilayers for high-performance power-semi-conductor devices;J KOR CRYST GROWTH C;2017

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