Simulation and analysis on thermal resistance and performance degradation of PiN power diode with 4H-SiC material
Author:
Affiliation:
1. School of MicroelectronicsXidian University, Xi'an 710071, China
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1179/1432891715Z.0000000001863
Reference8 articles.
1. Self-heating and loss of thermal stability under a single current surge pulse in high-voltage 4H-SiC rectifier diodes
2. High temperature long term stability of SiC Schottky diodes
3. Influence of series resistance and cooling conditions on I–V characteristics of SiC merged PiN Schottky diodes
4. Power Conversion With SiC Devices at Extremely High Ambient Temperatures
5. Simulation and experimental results on the forward J–V characteristic of Al implanted 4H–SiC p–i–n diodes
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