Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure-Reference-Cited by-同舟云学术

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Influence of oxygen vacancy on resistive switching property of Ag/Nb:SrTiO3/Ti structure

Published:2013-11 Issue:6 Volume:28 Page:375-379
ISSN:1066-7857
Container-title:Materials Technology
language:en
Short-container-title:Materials Technology

Author:

Shen J X,Qian H Q,Zhang Y,Wang G F,Shen J Q,Wang S L,Cui C,Li P G,Lei M,Tang W H

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1179/1753555713Y.0000000076

Reference17 articles.

1. Resistive switching in metal–ferroelectric–metal junctions

2. Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films

3. Electrode-dependent electrical properties of metal/Nb-doped SrTiO3 junctions

4. Field-induced resistive switching in metal-oxide interfaces

5. Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The influence of interface contact condition on resistive switching of Au/Nb:SrTiO3 heterojunctions;Applied Physics Letters;2023-10-09

2. Polarization-field tuning and stable performance of the resistance switching in a ferroelectric/amorphous PbZr0.2Ti0.8O3/La2Zr2O7 heterostructure;Journal of Materials Science: Materials in Electronics;2023-06

3. Reversible modulation of electric transport properties by oxygen absorption and releasing on Nb:SrTiO3 surface;Journal of Applied Physics;2014-11-07

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