Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures-Reference-Cited by-同舟云学术

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Deep trap characterisation and conduction band offset determination of AI0.48In0.52As/(Ga0.7AI0.3)0.48In0.52As heterostructures

Published:1997-11 Issue:11 Volume:13 Page:971-973
ISSN:0267-0836
Container-title:Materials Science and Technology
language:en
Short-container-title:Materials Science and Technology

Author:

Ducroquet F.,Jacovetti G.,Rezzoug K.,Ababou S.,Guillot G.,Praseuth J. P.,Olivier-Martin F.,Giraudet L.

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1179/mst.1997.13.11.971

Reference8 articles.

1. Monolithic balanced pin-JFET front-end for 1.3-1.5um coherent transmission

2. Molecular Beam Epitaxy Grown Al ( Ga ) InAs : Schottky Contacts and Deep Levels

3. Measurement of conduction band offsets through Schottky diode transport measurements

4. Current Transport in Al/InAlAs/InGaAs Heterostructures

5. Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys

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1. Output conductance dispersion and drain current transients in InP-HFETs: observations and equivalent circuit model;Solid-State Electronics;2000-09

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