Metallurgical topics in silicon device interconnections: Thin film stresses-Reference-Cited by-同舟云学术

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Metallurgical topics in silicon device interconnections: Thin film stresses

Published:1989-01 Issue:1 Volume:34 Page:53-68
ISSN:0950-6608
Container-title:International Materials Reviews
language:en
Short-container-title:International Materials Reviews

Author:

d'Heurle F. M.

Publisher

Informa UK Limited

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Link

http://www.tandfonline.com/doi/pdf/10.1179/imr.1989.34.1.53

Reference126 articles.

1. D. V. MORGAN : in ‘Reliability and degradation, semiconductor devices and circuits’, (ed. M. J. Howes and D. V. Morgan), 151; 1984, New York, Wiley.

2. Reduction of Electromigration in Aluminum Films by Copper Doping

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