Selective low pressure chemical vapour deposition epitaxy using silane only for advanced device applications
Author:
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
http://www.tandfonline.com/doi/pdf/10.1179/mst.1995.11.1.31
Reference9 articles.
1. A novel high-speed silicon bipolar transistor utilizing SEG and CLSEG
2. Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment
3. Reducing the Temperature of Conventional Silicon Epitaxy for Selective Poly‐Epi Growth
4. Long incubation times for selective epitaxial growth of silicon using silane only
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