Calculation of impurity energy levels of transition metal ions in inorganic crystals based on electronegativity
Author:
Affiliation:
1. School of Chemical EngineeringDalian University of Technology, Dalian 116024, China
2. State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1179/1433075X12Y.0000000050
Reference48 articles.
1. 4d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition
2. Double-Hole-Mediated Coupling of Dopants and Its Impact on Band Gap Engineering inTiO2
3. Conduction Band Energy Level Control of Titanium Dioxide: Toward an Efficient Visible-Light-Sensitive Photocatalyst
4. The Role of Metal Ion Dopants in Quantum-Sized TiO2: Correlation between Photoreactivity and Charge Carrier Recombination Dynamics
5. Fe+3-doped TiO2: A combined experimental and computational approach to the evaluation of visible light activity
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