Infrared emissivity properties of Sn doped ZnO films deposited by sol–gel method
Author:
Affiliation:
1. School of Chemical EngineeringNanjing Forestry University, No. 159 Longpan Road, Nanjing 210037, China
2. School of Material Science and EngineeringNanjing University of Aeronautics and Astronautics, No. 29 Yudao Street, Nanjing 210016, China
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1179/1433075X13Y.0000000113
Reference33 articles.
1. A comprehensive review of ZnO materials and devices
2. Structural and electrical properties of ZnO films prepared by screen printing technique
3. Morphology control of ZnO crystalline particles in aqueous solution
4. Magnetic and electric properties of transition-metal-doped ZnO films
5. Ferromagnetism in transition-metal-dopedTiO2thin films
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1. Study on the infrared emissivity of nonstoichiometric titanium chromium nitride films;Thin Solid Films;2022-07
2. INFLUENCE OF SUBSTRATE TEMPERATURE ON THE COMPOSITION, ELECTRICAL RESISTIVITY AND INFRARED EMISSIVITY OF PtOx FILMS;Surface Review and Letters;2019-10-17
3. Effects of O2 Partial Pressure on Composition and Infrared Emissivity of PtO x Films Prepared by Reactive Magnetron Sputtering;Journal of Electronic Materials;2018-02-22
4. Effects of annealing temperature on the structure, electrical resistivity and infrared emissivity of PtO x films;Vacuum;2017-11
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