Evolution of interface configuration in sapphire single crystal growth via Czochralski method-Reference-Cited by-同舟云学术

Evolution of interface configuration in sapphire single crystal growth via Czochralski method

Published:2013-11 Issue:7 Volume:17 Page:552-556
ISSN:1432-8917
Container-title:Materials Research Innovations
language:en
Short-container-title:Materials Research Innovations

Author:

Sun C. T.¹²,Xue D. F.¹²

Affiliation:

1. School of Chemical EngineeringDalian University of Technology, Dalian 116024, China

2. State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.tandfonline.com/doi/pdf/10.1179/1433075X13Y.0000000102

Reference27 articles.

1. Growth Inside a Corner: The Limiting Interface Shape

2. Thermal Oxidation Strategy towards Porous Metal Oxide Hollow Architectures

3. Formation of Nb2O5 Nanotube Arrays Through Phase Transformation**

4. pH-assisted crystallization of Cu2O: chemical reactions control the evolution from nanowires to polyhedra

5. Double-Shelled Nanocapsules of V2O5-Based Composites as High-Performance Anode and Cathode Materials for Li Ion Batteries

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