Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor-Reference-Cited by-同舟云学术

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Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

Published:2015-09 Issue:3 Volume:1 Page:361-366
ISSN:2095-8099
Container-title:Engineering
language:en
Short-container-title:Engineering

Author:

Liu Guoyou,Ding Rongjun,Luo Haihui

Publisher

Elsevier BV

Subject

General Engineering,Energy Engineering and Power Technology,Materials Science (miscellaneous),General Chemical Engineering,Environmental Engineering,General Computer Science

Reference22 articles.

1. High power converter technologies for saving and sustaining energy;Tamai,2014

2. Current status and future trends in silicon power devices;Hower,2010

3. Technical features and development trend of high-voltage IGBT for rail transit traction application;Ding;Electric Drive for Locomotives,2014

4. Power devices for grid connections;Casey,2012

5. High-power IGBT module technology using in smart grid;Liu;Power Electronics,2009

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit;Japanese Journal of Applied Physics;2024-02-05

2. The role of power device technology in the electric vehicle powertrain;International Journal of Energy Research;2022-09-12

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