A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor

Author:

Maity Heranmoy1

Affiliation:

1. Department of Electronic and Communications Engineering, NSHM Knowledge Campus Durgapur, West Bengal, India

Abstract

Aim: This paper proposed the design and implementation of a 2-input XOR gate using 4- transistor. Method: The XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed using two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate 2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed using four transistors. Results: The proposed work theoretically and experimentally describes the 2-input XOR gate using 4- transistor. The proposed work was verified using Xilinx (ISE Design Suite).

Publisher

Bentham Science Publishers Ltd.

Subject

Building and Construction

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