Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching-Reference-Cited by-同舟云学术

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Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

Published:2011-08-01 Issue:4 Volume:7 Page:594-597
ISSN:1573-4137
Container-title:Current Nanoscience
language:en
Short-container-title:CNANO

Author:

Hu Zhan-Shuo,Hung Fei-Yi,Chang Shoou-Jinn,Huang Bohr-Ran,Lin Bo-Cheng,Chen Kuan-Jen,Chen Tse-Pu,Hsu Wen-I

Publisher

Bentham Science Publishers Ltd.

Subject

Pharmaceutical Science,Biomedical Engineering,Medicine (miscellaneous),Bioengineering,Biotechnology

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Developments in Focused Ion Beam and its Application in Nanotechnology;Current Nanoscience;2016-10-31

2. Fabrication of Centimeter-scale Well-aligned SiC/SiO2 Core-shell Nanowires by Interlaminar Vapor-diffusion Reaction Method;Current Nanoscience;2012-10-01

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