Electronic and Magnetic Properties of Eutectoid Growth Mn-rich Ge1-xMnx Dilute Magnetic Semiconductors

Abstract

Background: Dilute magnetic semiconductors (DMSs) have attracted great attention in recent years due to their potential applications in spintronic devices. Objective: This study aimed to investigate the magnetic and electronic properties of Mn-rich Ge semiconductors. Methods: The magnetic and electronic properties of eutectoid growth Mn-rich Ge1-xMnx dilute magnetic semiconductors (DMSs) with a high Mn dopant close to the composition of Ge2Mn are investigated by the first-principles calculations. Results: Using the diamond structure models of Ge24Mn8, Ge22Mn10, and Ge20Mn12, we show that the magnetic interactions of Mn atoms are dominated by ferrimagnetic coupling and that the Mn 3d states are substantially hybridized with the valence bands of the Ge matrix. Conclusion: This indicates that Mn-rich Ge1-xMnx DMSs demonstrate a ferromagnetic and metallic character, and their carriers can mobilize in the lattice more freely. The present investigation could provide insights into understanding the nature of transition-metal-rich dilute magnetic semiconductors.