Iodine-assisted ultrafast growth of high-quality monolayer MoS<sub>2</sub> with sulfur-terminated edges-Reference-Cited by-同舟云学术

Iodine-assisted ultrafast growth of high-quality monolayer MoS<sub>2</sub> with sulfur-terminated edges

Published:2023-06-01 Issue:4 Volume:2 Page:20230009
ISSN:2097-1168
Container-title:National Science Open
language:en
Short-container-title:NSO

Author:

Wu Qinke,Zhang Jialiang,Tang Lei,Khan Usman,Nong Huiyu,Zhao Shilong,Sun Yujie,Zheng Rongxu,Zhang Rongjie,Wang Jingwei,Tan Junyang,Yu Qiangmin,He Liqiong,Li Shisheng,Zou Xiaolong,Cheng Hui-Ming,Liu Bilu

Publisher

Science China Press., Co. Ltd.

Link

https://engine.scichina.com/doi/pdf/EF73C60CCE32464C9847CDE15CD7281A

Reference56 articles.

1. Mak KF, Lee C, Hone J. Atomically thin MoS2: A new direct-gap semiconductor. Phys Rev Lett, 2010, 105:

2. Radisavljevic B, Radenovic A, Brivio J. Single-layer MoS2 transistors. Nat Nanotech, 2011, 6: 147-150.

3. Tang L, Tan J, Nong H. Chemical vapor deposition growth of two-dimensional compound materials: Controllability, material quality, and growth mechanism. Acc Mater Res, 2021, 2: 36-47.

4. Ji Q, Zhang Y, Gao T. Epitaxial monolayer MoS2 on mica with novel photoluminescence. Nano Lett, 2013, 13: 3870-3877.

5. Zhou J, Lin J, Huang X. A library of atomically thin metal chalcogenides. Nature, 2018, 556: 355-359.

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