From integrated circuits to integrated systems
Author:
Publisher
Science China Press., Co. Ltd.
Subject
Engineering (miscellaneous),General Computer Science
Link
https://engine.scichina.com/doi/pdf/3CCBD43E51C34F8AB0CA15812072649C
Reference39 articles.
1. Kilby J S, Keonjian E. Design of a semiconductor-solid-circuit adder. In: Proceedings of International Electron Devices Meeting, Washington, 1959. 76--78.
2. Allison J F, Dumin D J, Heiman F P. Thin-film silicon: Preparation, properties, and device applications. Proc IEEE, 1969, 57: 1490-1498.
3. Chang J, Chen Y H, Chan G, et al. 15.1 A 5nm 135Mb SRAM in EUV and high-mobility-channel FinFET technology with metal coupling and charge-sharing write-assist circuitry schemes for high-density and low-VMIN applications. In: Proceedings of IEEE International Solid- State Circuits Conference (ISSCC), San Francisco, 2020. 238--240.
4. Chenming Hu null, Bokor J, Tsu-Jae King J. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans Electron Devices, 2000, 47: 2320-2325.
5. Yakimets D, Eneman G, Schuddinck P. Vertical GAAFETs for the Ultimate CMOS Scaling. IEEE Trans Electron Devices, 2015, 62: 1433-1439.
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